The EM6K34 is a high-performance Nch + Nch MOSFET produced by ROHM, with high-speed switching, small package, and low drive voltage, used in switch power supplies and other fields.
The EM6K34 is a low‑voltage, high‑speed N‑channel MOSFET offered by ROHM. It features a small EMT6 package, ultra‑low 0.9 V drive voltage, and is intended for switching applications in general‑purpose electronic equipment.
The document provides absolute maximum ratings, electrical characteristics, thermal resistance data, packaging details, and measurement circuit examples, along with legal notices and usage guidelines.
| Drain‑source voltage (Voss) | 50 V |
|---|---|
| Gate‑source voltage (Vess) | +8 V |
| Continuous drain current (Id) | 200 mA |
| Pulsed drain current (Ipp) | 800 mA |
| Power dissipation (Pp) | 150 mW total |
| Maximum channel temperature (Tch) | 150 °C |
| Storage temperature range (Tstg) | -55 °C to +150 °C |
| Thermal resistance, channel‑to‑ambient (Rth ch‑a) | 838 °C·W/TOTAL |
| Package type | T2R 22 |
The maximum drain‑source voltage is 50 V.
The EM6K34 is supplied in a T2R 22 package.
The device is designed for an ultra‑low 0.9 V gate‑source drive.
The datasheet notes that the product is not intended for radiation‑tolerant or safety‑critical applications such as medical instruments or aerospace equipment.