EM6M2 is a low voltage drive Nch+Pch MOSFET produced by ROHM. It has the characteristics of high switching speed, low driving voltage, and built-in G-S protection diode. It can be applied to switching circuits.
The EM6M2 is a dual MOSFET (N‑channel and P‑channel) packaged in an EMT6 case. It offers low‑voltage 1.2 V drive, high‑speed switching, and built‑in protection diodes.
The document provides absolute maximum ratings, electrical characteristics, packaging details, and measurement circuits, along with legal notices and usage guidelines for designers.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +8 V (N‑ch) / +10 V (P‑ch) |
| Continuous drain current (ID) | 200 mA |
| Pulsed drain current (ID,pulse) | 400 mA |
| Total power dissipation | 150 mW (total) |
| Storage temperature range | -55 °C to +150 °C |
| Maximum channel temperature | 150 °C |
The EM6M2 can withstand up to 20 V drain‑source voltage.
It is supplied in a Taping #2 package, type code T2R 2.
The forward voltage is 1.2 V at 100 mA.
Both N‑channel and P‑channel devices operate with a low 1.2 V drive.