ES6U2 1.5V Drive Nch+SBD MOSFET is a device that integrates Nch MOSFET and Schottky diode. It has the characteristics of high switching speed, low on-resistance, low driving voltage, etc., and is suitable for internal circuit switching applications.
The ES6U2 combines an N‑channel MOSFET and a Schottky barrier diode in a WEMT6 package. It offers high‑speed switching, low on‑resistance, and can be driven with a low 1.5 V gate voltage. The device includes a built‑in low‑voltage Schottky diode for reverse‑current protection.
Key electrical parameters include a 20 V drain‑source breakdown voltage, +10 V gate‑source rating, continuous drain current of up to 156 A, and a power dissipation of 0.7 W per element. The component is supplied in a ceramic‑mounted package and is intended for general‑purpose electronic equipment such as audio‑visual, office, and communication devices.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 156 A |
| Power dissipation (P_D) | 0.7 W per element |
| Storage temperature range | -55 °C to +150 °C |
No, the products specified in this document are not designed to be radiation tolerant.
The reverse voltage rating is 20 V.
It can be stored from –55 °C up to +150 °C.
The SBD has a large reverse leak current compared to other diode types, which can raise junction temperature and increase reverse power loss.