The ES6U3 is a 4V drive Nch+SBD MOSFET from ROHM, which features high switching speed, low on-resistance, and a built-in low VF Schottky barrier diode. It can be used in internal circuit switching applications.
The ES6U3 is a silicon N‑channel MOSFET combined with a low‑Vr Schottky barrier diode in a WEMT6 package. It offers high‑speed switching, low on‑resistance, and integrated ESD protection.
Typical applications include switching circuits in audio‑visual equipment, office automation, communication devices, and other general‑use electronic products. The sheet lists electrical characteristics, package dimensions, and recommended design considerations.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 41.4 A |
| Power dissipation (PD) | 0.7 W per element |
| Reverse voltage (VR) | 20 V |
| Forward voltage (VF) | 0.86 V |
| Storage temperature range | -55 °C to +150 °C |
The ES6U3 can withstand a drain‑source voltage of up to 30 V.
It includes a built‑in low‑Vr Schottky barrier diode.