The TT8J11 is a 1.5V drive Pch + Pch MOSFET produced by ROHM. It has the characteristics of low voltage drive, low on-resistance, and small packaging.
The TT8J11 is a silicon P‑channel MOSFET designed for low‑voltage (1.5 V) drive applications. It features low on‑resistance, a small high‑power package, and is intended for switching use.
The document lists key parameters such as maximum drain‑source voltage, continuous and pulsed drain currents, on‑resistance, capacitances, and thermal resistance, along with typical characteristic curves and recommended measurement circuits.
| Drain‑source voltage (Vds) | -12 V |
|---|---|
| Gate‑source voltage (Vgs) | -8 V |
| Continuous drain current (Id) | +3.5 A |
| Pulsed drain current (Id,pulse) | +12 A |
| Power dissipation (Pd) | 1.25 W |
| Maximum junction temperature (Tj) | 150 °C |
| On‑resistance (Rds(on)) typical | 60 mΩ |
| Input capacitance (Ciss) | 2600 pF |
| Output capacitance (Coss) | 200 pF |
The device is rated for a maximum drain‑source voltage of -12 V.
It can carry a continuous drain current of up to +3.5 A.
The MOSFET is designed for a low‑voltage drive of 1.5 V.