ES6U41 is ROHM's 2.5V Drive Nch+SBD MOSFET, with high switching speed, low on-resistance, low drive voltage characteristics
The ES6U41 is a 2.5 V drive N‑channel MOSFET combined with a Schottky barrier diode in a compact T2R package. It offers high‑speed switching, low on‑resistance, and a built‑in low‑voltage Schottky diode for efficient power management.
The document lists absolute maximum ratings, electrical characteristics, and typical performance curves, including drain‑source voltage, gate‑source voltage, continuous drain current, power dissipation, and diode forward/reverse parameters. It also contains application notes and a legal notice regarding usage and reproduction.
| Drain‑source voltage (Vds) | 30 V |
|---|---|
| Gate‑source voltage (Vgs) | 12 V |
| Continuous drain current (Id) | 41.5 A |
| Power dissipation (Pd) | 0.7 W per element |
| Repetitive peak reverse voltage (Vr) | 25 V |
| Forward voltage (Vf) | 1.2 V |
The continuous drain current is 41.5 A.
The device can withstand up to 30 V between drain and source.
It is supplied in a T2R package.
The diode’s repetitive peak reverse voltage is 25 V.