This document describes the features and characteristics of the 1.5V Drive Pch+SBD MOSFET ES6U1 product from ROHM Co., Ltd.
The ROHM ES6U1 combines a P‑channel MOSFET and a Schottky barrier diode in a WEMT6 package. It is designed for low‑voltage (1.5 V) drive applications and offers high‑speed switching with low on‑resistance.
The document provides absolute maximum ratings, typical electrical characteristics, packaging information, and measurement circuit diagrams, along with safety notices and usage guidelines.
| Drain‑source voltage (VOSS) | 12 V |
|---|---|
| Gate‑source voltage (VASS) | +10 V |
| Continuous drain current (IB) | 41.3 A |
| Continuous source current (IS) | 0.5 A |
| Reverse voltage of built‑in diode (VRM) | 25 V |
| Junction temperature (TJ) | 150 °C |
| Power dissipation (Pp) | 0.7 W (MOSFET) |
| Total gate charge (Qg) | 2.4 nC |
The ES6U1 is rated for a maximum drain‑source voltage of 12 V.
It is supplied in a WEMT6 package that integrates the MOSFET and Schottky diode.
The diode can withstand a repetitive peak reverse voltage of 25 V.