2SD2403 is an NPN silicon epitaxial transistor produced by kexin. It has the characteristics of high current capacitance and low collector saturation voltage.
The 2SD2403 is an NPN silicon epitaxial transistor offered in an SOT‑89 package. It features high current capability, low collector saturation voltage, and a wide operating temperature range. The device is intended for applications requiring fast switching and moderate power dissipation.
Key electrical ratings include a collector‑base voltage of 80 V, collector‑emitter voltage of 60 V, and emitter‑base voltage of 6 V. Pulse collector current can reach 5 A, with a continuous base current of 0.2 A. The transistor’s total power dissipation is limited to 2 W, and it operates from –55 °C to +150 °C storage temperature. Performance parameters such as hFE, gain‑bandwidth product, output capacitance, and switching times are also specified.
| Collector‑Base Voltage (VcBO) | 80 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 60 V |
| Emitter‑Base Voltage (VEB) | 6 V |
| Pulse Collector Current (Ic pulse) | 5 A |
| Base Current (IB) | 0.2 A |
| Total Power Dissipation (PT) | 2 W |
| Junction Temperature (Tj) | 150 °C |
| DC Current Gain (hFE) | 100‑200 (typical) |
| Turn‑on Time (ton) | 150 ns |
| Storage Time (tstg) | 652 ns |
The 2SD2403 can withstand up to 60 V between collector and emitter.
The typical hFE range is 100 to 200, with higher values possible at higher currents.
Turn‑on time is about 150 ns and storage time is about 652 ns.