This document describes a power transistor 2SA2071, which features high speed switching, low saturation voltage, and strong discharge power.
This datasheet describes the ROHM 2SA2071 PNP silicon planar power transistor, covering its high‑speed switching behavior, low saturation voltage, and strong discharge capability. It includes the device structure, packaging specifications, absolute maximum ratings, and detailed electrical characteristics.
Typical applications include low‑frequency amplifiers and other circuits requiring fast switching and reliable performance. The document also contains notes on usage, storage conditions, and legal notices.
| Collector‑base voltage (Vcbo) | -60 V |
|---|---|
| Collector‑emitter voltage (Vceo) | -60 V |
| Emitter‑base voltage (Vebo) | -6 V |
| Power dissipation (Pd) | 20 W |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fT) | 180 MHz |
| Turn‑on time (Ton) | 20 ns |
| Fall time (Tf) | 20 ns |
It uses a Type Code 7100 package mounted on a 40 × 40 × 0.7 mm ceramic substrate.