2SAR293P is a medium power PNP type NPN transistor produced by ROHM. Its feature is low saturation voltage (maximum 0.35V), and it is used in driving circuits.
The ROHM 2SAR293P datasheet presents the specifications of this medium‑power PNP silicon epitaxial planar transistor, including its structure, dimensions, and packaging details.
It lists absolute maximum ratings, electrical characteristics such as voltage limits, current ratings, gain, and switching times, and provides typical application curves and a switching‑time test circuit.
| Collector‑base voltage (Vcbo) | -30 V |
|---|---|
| Collector‑emitter voltage (Vceo) | -30 V |
| Emitter‑base voltage (Vebo) | 6 V |
| Pulsed collector current | -2 A |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to 150 °C |
| DC current gain (hFE) | 270‑680 |
| Transition frequency (fT) | 320 MHz |
| Turn‑on time (ton) | 2‑60 ns |
| Storage time (tsg) | 2‑160 ns |
| Fall time (t) | 2‑50 ns |
The maximum collector‑emitter voltage is -30 V.
The DC current gain (hFE) ranges from 270 to 680.