This document describes the structure, dimensions, and features of the ROHM 2SAR543R medium power PNP silicon epitaxial planar transistor. The product features low saturation voltage and high speed switching, making it suitable for driver applications.
The 2SAR543R is a medium‑power PNP silicon epitaxial planar transistor offered in a TSMT3 package. It features a low saturation voltage of -0.4 V, high‑speed switching, and is suitable for driver and collector applications.
The datasheet lists absolute maximum ratings, detailed electrical characteristics such as collector‑emitter voltage, current gain, transition frequency, and switching times, as well as characteristic curves and a test circuit. Legal notices clarify usage limits and export requirements.
| Collector‑emitter voltage (Vceo) | -50 V |
|---|---|
| Collector current (Ic) | 3 A |
| Power dissipation (Pd) | 0.5 W |
| Junction temperature (Tj) | 150 °C |
| Saturation voltage (Vce(sat)) | -0.4 V (max) |
| Transition frequency (fT) | 300 MHz |
| Turn‑on time (ton) | 45 ns |
| Storage time (tog) | 250 ns |
The device can withstand up to -50 V between collector and emitter.
The transistor is rated for a continuous collector current of 3 A.
It is supplied in a TSMT3 surface‑mount package.
No, the datasheet states the product is not designed to be radiation tolerant.