This document is the datasheet of 2SAR512P, which introduces the structure, features, applications, external dimensions, package, absolute maximum ratings, electrical characteristics of the product.
The ROHM 2SAR512P is a medium‑power PNP silicon epitaxial planar transistor with a maximum collector‑emitter voltage of -30 V and a collector current rating of 2 A. It features a low saturation voltage (typical -0.4 V) and high‑speed switching suitable for a variety of applications.
The datasheet provides detailed electrical characteristics, absolute maximum ratings, packaging information, and typical characteristic curves. It also includes a switching‑time test circuit and legal notices regarding use and distribution of the document.
| Collector‑emitter voltage (VCEO) | -30 V |
|---|---|
| Collector current (IC) | 2 A |
| Power dissipation (PD) | 0.5 W |
| Junction temperature (TJ) | 150 °C |
| Transition frequency (fT) | 430 MHz |
| DC current gain (hFE) | 200‑500 |
| Turn‑on time (ton) | 30 ns |
The maximum collector‑emitter voltage is -30 V.
The typical saturation voltage is about -0.4 V.
The transistor is rated for a collector current of 2 A.
The transition frequency is specified as 430 MHz.