This document describes the features and characteristics of the 2SAR544R medium power PNP silicon epitaxial planar transistor produced by ROHM Co., Ltd., including low saturation voltage and high speed switching.
The ROHM 2SAR544R is a medium‑power PNP silicon epitaxial planar transistor. This datasheet provides the device structure, key features such as low saturation voltage and high‑speed switching, and typical application areas like driver circuits.
Technical information includes absolute maximum ratings, electrical characteristics, packaging details, and characteristic curves. Legal notices and usage guidelines are also included at the end of the document.
| Collector‑emitter voltage (VCEO) | -80 V |
|---|---|
| Collector‑base voltage (VSO) | -80 V |
| Emitter‑base voltage (VESO) | -6 V |
| Collector current (IC) | 225 A |
| Junction temperature (TJ) | 150 °C |
| Storage temperature range | -55 to 150 °C |
| Transition frequency (fT) | 280 MHz |
| DC current gain (hFE) | 120 – 390 |
| Typical saturation voltage (VOE(sat)) | -0.4 V |
The maximum collector‑emitter voltage is -80 V.
The typical saturation voltage is -0.4 V.
The transition frequency is specified as 280 MHz.
The device can be stored from -55 °C to 150 °C.