2SAR513P is a medium power PNP type silicon transistor produced by ROHM. It has the characteristics of low saturation voltage and high switching speed, and is suitable for driving applications.
The ROHM 2SAR513P is a medium‑power PNP silicon epitaxial planar transistor designed for applications requiring low saturation voltage and high‑speed switching. The datasheet provides detailed electrical characteristics, absolute maximum ratings, and typical performance curves.
Key sections include structure and dimensions, packaging specifications, absolute maximum ratings, electrical characteristics, characteristic curves, and a switching‑time test circuit. Legal notices and usage guidelines are also included at the end of the document.
| Collector‑base breakdown voltage (BVcbo) | -50 V |
|---|---|
| Emitter‑base breakdown voltage (BVe) | 6 V |
| Maximum collector current (Ic) | 1 A |
| Transition frequency (fT) | 400 MHz |
The typical saturation voltage is -0.4 V.