2SAR533P is a medium power PNP type silicon crystal transistor produced by ROHM company. It has the characteristics of low saturation voltage, high switching speed, etc., and can be used in driver circuits and other applications.
This data sheet describes the ROHM 2SAR533P PNP silicon epitaxial planar transistor. It includes sections on structure, dimensions, features, applications, packaging specifications, absolute maximum ratings, and detailed electrical characteristics with typical characteristic curves.
The document also provides a switching‑time test circuit, ordering information, and legal notices. It notes that the device is intended for general‑purpose electronic equipment and is not designed for radiation‑tolerant or safety‑critical applications.
| Collector‑emitter voltage (VCEO) | -50 V (max) |
|---|---|
| Power dissipation | 2 W (max) |
| Transition frequency (fT) | 300 MHz (typ) |
| Saturation voltage (VCE(sat)) | -0.4 V (max) |
| Junction temperature (Tj) | 150 °C (max) |
| Package type | T100 |
| Basic ordering unit | 1000 pieces |
The device is rated for a maximum collector‑emitter voltage of -50 V.
Its typical transition frequency is 300 MHz.
No, the document states the product is not designed to be radiation tolerant.