2SAR553P is a medium power PNP silicon transistor produced by ROHM Company. It has the characteristics of low saturation voltage and high switching speed. It is suitable for use in driver applications.
This datasheet describes the 2SAR553P medium‑power PNP silicon epitaxial planar transistor. It includes absolute maximum ratings, electrical characteristics, packaging details, and typical performance curves.
The document also contains a switching‑time test circuit, application notes, and legal notices. It is intended for designers of audio‑visual, office‑automation, communication, and other electronic equipment.
| Collector‑emitter voltage (VCEO) | -50 V |
|---|---|
| Collector current (IC) | 2 A |
| Junction temperature (TJ) | 150 °C |
| Saturation voltage (VCE(sat)) | -0.4 V |
The maximum collector‑emitter voltage is -50 V.
The device can handle up to 2 A of collector current.
Typical saturation voltage is -0.4 V.
The junction temperature may reach up to 150 °C.