2SAR514P is a medium power PNP silicon epitaxial planar transistor produced by ROHM. Its features are low saturation voltage (typical VCE(sat) = -0.4V, maximum -0.6V) and high switching speed. This device is mainly used for switching applications.
The 2SAR514P is a medium‑power PNP silicon epitaxial planar transistor designed for low saturation voltage and high‑speed switching. It features a typical saturation voltage of -0.4 V and a DC current gain ranging from 120 to 390.
The device’s absolute maximum ratings include a collector‑emitter voltage of -80 V, a junction temperature up to 150 °C, and a power dissipation of 2 W. Typical applications are driver circuits and other general‑purpose electronic equipment. The package is supplied in a T100 tape format with a basic ordering unit of 1 000 pieces.
| Collector‑base voltage (Vcbo) | -80 V |
|---|---|
| Emitter‑base voltage (Vebo) | -6 V |
| Power dissipation | 2 W |
| Junction temperature (Tj) | 150 °C |
| Transition frequency (fT) | 380 MHz |
The device can withstand a collector‑emitter voltage of up to -80 V.
The transistor is rated for operation up to a junction temperature of 150 °C, with storage temperatures from -55 °C to 150 °C.
The transition frequency (fT) is specified as 380 MHz.