This document describes the features and dimensions of the medium power transistor 2SA2094 produced by ROHM, and lists its applications and packaging specifications. The transistor has features such as high-speed switching, low saturation voltage, and strong discharge power for inductive load and capacitance load.
The 2SA2094 is a medium‑power PNP epitaxial planar silicon transistor designed for low saturation voltage and high‑speed switching applications such as low‑frequency amplifiers and inductive loads. The datasheet outlines its features, typical applications, and physical structure.
Key specifications include a collector‑emitter voltage of 60 V, typical saturation voltage of 200 mV at 1 A, and a maximum power dissipation of 500 mW. Electrical characteristics, switching performance, and packaging information (TL type code) are detailed, along with absolute maximum ratings and recommended operating conditions.
| Collector‑emitter voltage (VCEO) | ‑60 V |
|---|---|
| Emitter‑base voltage (VESO) | 6 V |
| DC collector current (Ic) | ‑2 A |
| Pulsed collector current | 4 A |
| Power dissipation (PD) | 500 mW |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | ‑55 °C to 150 °C |
| Transition frequency (fT) | 300 MHz |
| Typical saturation voltage at Ic = ‑1 A | ≈200 mV |
The maximum collector‑emitter voltage is 60 V.
The typical saturation voltage is about 200 mV at Ic = ‑1 A.
The transistor is supplied in a TL type code package.