2SAR544P is a PNP type silicon epitaxial planar transistor from ROHM. Its features are low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) and high speed switching. This product can be used for driver applications.
The 2SAR544P is a medium‑power PNP silicon epitaxial planar transistor offered by ROHM. The datasheet lists its absolute maximum ratings, typical electrical parameters, and package information for designers of audio‑visual, office‑automation, communication, and other electronic equipment.
Key specifications include a collector‑emitter voltage of –80 V, a typical saturation voltage of –0.4 V at 1 A, a transition frequency of 280 MHz, and a DC current gain (hFE) ranging from 120 to 390. The device is rated for a junction temperature up to 150 °C and can be stored from –55 °C to 150 °C.
| Collector‑emitter voltage (VCEO) | -80 V |
|---|---|
| Collector‑base voltage (VCBO) | -80 V |
| Emitter‑base voltage (VEB) | 6 V |
| Maximum collector current (IC) | 25 A |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -55 to 150 °C |
| Saturation voltage (VCE(sat)) | -0.4 V (max) |
| Transition frequency (fT) | 280 MHz |
| DC current gain (hFE) | 120‑390 |
The maximum collector‑emitter voltage is –80 V.
The typical saturation voltage is –0.4 V (max) at Ic = –1 A.
The device can operate up to a junction temperature of 150 °C.