2SAR552P is a PNP type silicon epitaxial planar transistor produced by ROHM. It has the characteristics of low saturation voltage and high switching speed, which can be used for driver circuits.
This datasheet describes the ROHM 2SAR552P medium‑power PNP transistor, including its structure, dimensions, features, and typical applications such as driver circuits. It also lists the packaging type (T100 tape) and ordering details.
Key specifications include absolute maximum ratings, electrical characteristics, and switching performance. The document also contains characteristic curves, a test circuit for switching time, and legal notices regarding use and reproduction.
| Collector‑emitter voltage (Vceo) max | -30 V |
|---|---|
| Collector current (Ic) max | 3 A |
| Power dissipation | 2 W |
| Transition frequency (fT) | 330 MHz |
| DC current gain (hFE) | 200‑500 |
| Saturation voltage (Vce(sat)) typical | -0.4 V |
The maximum collector‑emitter voltage is -30 V.
Typical Vce(sat) is -0.4 V.
It is supplied in a T100 tape package with a basic ordering unit of 1000 pieces.