2SA2072 is a PNP silicon epitaxial planar transistor produced by ROHM Corporation. It has the characteristics of high voltage discharge, high speed switching and low noise. The rated voltage is -60V and the collector current is -3A.
The 2SA2072 is a PNP silicon epitaxial planar transistor designed for high‑speed switching and low noise operation. It offers a collector‑emitter voltage rating of 60 V and can handle a continuous collector current of 3 A, making it suitable for inductive and capacitive loads.
Key specifications include a typical turn‑on time of 20 ns, a power dissipation rating of 100 W, and a junction temperature limit of 150 °C. The datasheet also provides detailed electrical characteristics, packaging information, and recommended application circuits.
| Collector‑emitter voltage (VCEO) | 60 V |
|---|---|
| Emitter‑base voltage (VEB) | 6 V |
| Continuous collector current (Ic) | 3 A |
| Pulsed collector current | 6 A |
| Junction temperature (Tj) | 150 °C |
| Turn‑on time (ton) | 20 ns |
| Storage time (ts) | 150 ns |
| Fall time | 20 ns |
The maximum collector‑emitter voltage is 60 V.
The typical turn‑on time is 20 ns.
The device is rated for a continuous collector current of 3 A.