2SAR554P is a PNP silicon transistor produced by ROHM. It has the characteristics of low saturation voltage and high switching speed, and is suitable for switch power supplies, drivers and other applications.
This datasheet describes the ROHM 2SAR554P PNP silicon epitaxial planar transistor. It lists the device structure, dimensions, features such as low saturation voltage, and typical applications like driver circuits.
Key electrical parameters, absolute maximum ratings, and characteristic curves are presented, together with a switching‑time test circuit and legal notices. The document is intended for designers of audio‑visual, office‑automation, communication and other general‑use electronic equipment.
| Collector‑emitter voltage (VCEO) | -80 V (max) |
|---|---|
| Emitter‑base voltage (VEB) | 6 V (max) |
| Collector current (IC) | < 18 A (continuous) |
| DC current gain (hFE) | 120 – 390 |
| Transition frequency (fT) | 340 MHz (typ) |
The maximum collector‑emitter voltage is -80 V.
The typical transition frequency is 340 MHz.
The DC current gain (hFE) ranges from 120 to 390.