2SAR542P is a medium power PNP silicon epitaxial planar transistor from ROHM. It features a low saturation voltage (typically VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA)) and high speed switching. It can be used for driver applications.
This datasheet describes the 2SAR542P medium‑power PNP silicon planar transistor, including its structure, dimensions, and packaging specifications. It lists absolute maximum ratings, electrical characteristics, and typical performance curves.
The document also contains a switching‑time test circuit, application notes, and legal notices regarding the use of ROHM products. It is intended for designers of general‑use electronic equipment such as audio‑visual, office, and communication devices.
| Collector‑Emitter Breakdown Voltage (VCEO) | -30 V |
|---|---|
| Collector‑Base Breakdown Voltage (VCBO) | -30 V |
| Emitter‑Base Breakdown Voltage (VEB) | 6 V |
| DC Current Gain (hFE) | 200 – 500 |
| Junction Temperature (Tj) | 150 °C |
The maximum collector‑emitter voltage is -30 V.
The DC current gain (hFE) ranges from 200 to 500.