QFET QFET QFET QFET is a common switch power device on the market, mainly used in switch power supply, inverter, driver, etc.
The FQPF46N15 is an N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for audio amplifiers, DC‑DC converters and motor‑control applications.
Key specifications include a 150 V drain‑source rating, 25.6 A continuous drain current at 25 °C, 0.0422 Ω typical on‑resistance at VGS=10 V, and a TO‑220F package. The datasheet provides detailed electrical characteristics, thermal data, and typical performance curves.
| Drain‑Source Voltage (V_DSS) | 150 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 25.6 A |
| Pulsed Drain Current | 102.4 A |
| Gate‑Source Voltage (V_GS) Rating | ±25 V |
| On‑Resistance (R_DS(on)) Typical | 0.0422 Ω @ V_GS=10 V |
| Total Gate Charge (Q_g) Typical | 85 nC |
| Power Dissipation (P_D) @ 25 °C | 66 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.27 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
| Maximum Junction Temperature | 175 °C |
The device is rated for a maximum drain‑source voltage of 150 V.
It can conduct up to 25.6 A continuously at a case temperature of 25 °C.
Typical on‑resistance is 0.0422 Ω when V_GS = 10 V.
The MOSFET is supplied in a TO‑220F package.