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The FQPF4N20 is a 200 V N‑Channel enhancement‑mode power MOSFET fabricated with Fairchild’s planar stripe DMOS technology. It offers low gate charge (typical 5.0 nC), low output capacitance (typical 5.0 pF), fast switching, 100 % avalanche testing and improved dv/dt capability, making it suitable for high‑efficiency DC‑DC converters, switch‑mode power supplies, UPS, and motor‑control applications.
Key specifications include a continuous drain current of 2.8 A at 25 °C, pulsed drain current of 11.2 A, a maximum drain‑source voltage of 200 V, and a power dissipation rating of 27 W. The device is supplied in a TO‑220F package with a junction‑to‑case thermal resistance of 4.63 °C/W and a junction‑to‑ambient resistance of 62.5 °C/W.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 2.8 A |
| Pulsed Drain Current (ID) (Note 1) | 11.2 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| Power Dissipation (PD) @ 25 °C | 27 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 4.63 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Input Capacitance (Ciss) | 170‑220 pF |
| Output Capacitance (Coss) | 35‑45 pF |
| Total Gate Charge (Qg) | 5.0‑6.5 nC |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 2.8 A continuously at 25 °C.
The MOSFET is supplied in a TO‑220F package.
Yes, it is 100 % avalanche tested with a repetitive avalanche energy of 27 mJ.