2N5830 is a NPN general purpose amplifier produced by Fairchild Semiconductor. It is used for general purpose AC amplifiers and gas discharge display driving.
The 2N5830 is an NPN general‑purpose amplifier transistor designed for high‑voltage applications and gas‑discharge display driving. The datasheet lists its absolute maximum ratings, such as a 100 V collector‑emitter voltage and a continuous collector current of 200 mA, as well as small‑signal parameters and gain characteristics.
Thermal data include a total power dissipation of 625 mW, junction‑to‑case resistance of 83.3 °C/W, and junction‑to‑ambient resistance of 200 °C/W. Package information covers the TO‑92 case, tape‑and‑reel handling dimensions, and weight per unit. The document also contains product status definitions, trademark notices, and a life‑support policy disclaimer.
| Collector‑Emitter Voltage (Vceo) | 100 V |
|---|---|
| Collector‑Base Voltage (Vcbo) | 120 V |
| Emitter‑Base Voltage (Vebo) | 5.0 V |
| Continuous Collector Current (Ic) | 200 mA |
| Total Device Dissipation (Po) | 625 mW |
| Thermal Resistance, Junction‑to‑Case (Rjc) | 83.3 °C/W |
| Thermal Resistance, Junction‑to‑Ambient (Rja) | 200 °C/W |
| Operating & Storage Temperature Range | -55 to +150 °C |
The maximum collector‑emitter voltage is 100 V.
It can be stored and operated from –55 °C up to +150 °C.
The datasheet lists a total device dissipation of 625 mW.