The document contains information about spot inventory, technical data, encyclopedia information, and hot news. It specifically describes the features and characteristics of QFET products.
The FQPF46N15 is a 150 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is intended for low‑voltage applications such as audio amplifiers, high‑efficiency DC/DC converters, and motor control.
Key electrical characteristics include a continuous drain current of 25.6 A at 25 °C, a pulsed rating of 102.4 A, a typical on‑resistance of 0.042 Ω at Vgs = 10 V, and a total gate charge of about 85 nC. The device is supplied in a TO‑220F package with a maximum power dissipation of 66 W.
| Drain‑Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 25.6 A |
| Pulsed Drain Current (ID) rating | 102.4 A |
| Gate‑Source Voltage (VGS) rating | ±25 V |
| On‑Resistance (RDS(on)) typical | 0.042 Ω @ VGS=10 V |
| Total Gate Charge (Qg) | 85 nC (typical) |
| Power Dissipation (PD) at 25 °C | 66 W |
The device is rated for a maximum drain‑source voltage of 150 V.
It can conduct up to 25.6 A continuously at a junction temperature of 25 °C.