FQPF33N10 is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specifically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
The document describes the FQPF33N10 N‑Channel enhancement mode power MOSFET, highlighting its 18 A continuous current capability, low on‑resistance (0.0522 Ω at Vgs = 10 V), low gate charge (≈38 nC) and suitability for low‑voltage applications such as audio amplifiers and DC‑DC converters. It also lists absolute maximum ratings, thermal characteristics, and the device’s 175 °C maximum junction temperature.
Detailed electrical characteristics are presented, including on‑ and off‑state parameters, switching behavior, and typical curves. Several test circuits illustrate gate‑charge measurement, resistive switching, unclamped inductive switching, and diode recovery. Package dimensions for the TO‑220F case are given, followed by trademark, disclaimer, life‑support policy, and product status definitions.
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 18 A |
| Pulsed Drain Current (ID) (Note 1) | 72 A |
| On‑Resistance (RDS(on)) @ VGS=10 V | 0.0522 Ω |
| Typical Gate Charge | 38 nC |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance Junction‑to‑Case (RθJC) | 3.70 °C/W |
| Package | TO‑220F |
The device can handle a continuous drain current of 18 A at a case temperature of 25 °C.
The on‑resistance (RDS(on)) is 0.0522 Ω when VGS is 10 V.
The MOSFET is rated for a maximum junction temperature of 175 °C.