FQPF30N06L is a N-channel MOSFET produced by Fairchild. It has the characteristics of low on-state resistance, low gate charge, low gate capacitance, fast switching, etc. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
The Fairchild FQPF30N06L is a 60 V logic‑level N‑channel MOSFET designed with Fairchild’s planar stripe DMOS technology. It targets low‑voltage applications such as automotive DC‑DC converters and portable power management, offering low on‑resistance, fast switching, and high avalanche capability.
Key electrical parameters include a continuous drain current of 22.5 A at 25 °C, pulsed current of 90 A, typical RDS(on) of 0.035 Ω at VGS = 10 V, gate charge around 20 nC, and a junction temperature range up to 175 °C. The device is supplied in a TO‑220F package with a thermal resistance of 3.9 °C/W (junction‑to‑case).
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 22.5 A |
| Pulsed Drain Current (ID) (Note 1) | 90 A |
| Gate‑Source Voltage (VGS) | ±20 V |
| Input Capacitance (Ciss) | 800‑1040 pF |
| Output Capacitance (Coss) | 270‑350 pF |
| Junction Temperature Range | -55 °C to +175 °C |
| Power Dissipation (PD) at 25 °C | 38 W |
| Thermal Resistance Junction‑to‑Case | 3.9 °C/W |
| Thermal Resistance Junction‑to‑Ambient | 62.5 °C/W |
The device is rated for a maximum drain‑source voltage of 60 V.
It can conduct up to 22.5 A continuously at a case temperature of 25 °C.
The MOSFET can operate up to a junction temperature of 175 °C.