This document is the technical documentation of FQP32N12V2/FQPF32N12V2 N-Channel MOSFET, introducing the characteristics and features of this device, including RDS(on), Crss, dv/dt, etc.
The FQP32N12V2 and FQPF32N12V2 are N‑Channel enhancement‑mode power MOSFETs built with Fairchild's planar stripe DMOS technology. They are designed for low on‑state resistance, fast switching, and high avalanche capability, making them suitable for DC‑DC converters and synchronous rectification.
The datasheet lists key specifications such as a 120 V drain‑source rating, 32 A continuous drain current at 25 °C, low gate charge (typical 41 nC), and a TO‑220 package. Thermal data, switching waveforms, and test circuit diagrams are also included to aid designers in evaluating performance and integration.
| Drain‑Source Voltage (V_DSS) | 120 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 32 A |
| Pulsed Drain Current (I_D) (Note 1) | 128 A |
| Typical Gate Charge (Q_g) | 41 nC |
| On‑Resistance (R_DS(on)) | 0.043 Ω |
| Thermal Resistance Junction‑to‑Case (RθJC) | 1.0 °C·W |
| Power Dissipation (P_D) @ 25 °C | 150 W |
| Single‑Pulse Avalanche Energy | 439 mJ |
| Package Type | TO‑220 |
The device is rated for a maximum drain‑source voltage of 120 V.
It can conduct up to 32 A continuously at a case temperature of 25 °C.
The typical gate charge is 41 nC.
The MOSFET is supplied in a TO‑220 package.