FDN352AP is a low-voltage low-side MOSFET produced by Fairchild Semiconductor. It features extremely low on-state resistance and high power handling capability, making it suitable for notebook computer power management applications.
The FDN352AP is a single P‑Channel logic‑level MOSFET built with Fairchild's PowerTrench technology for low on‑state resistance and low gate charge. It is offered in a high‑power SOT‑23 (SuperSOT‑3) package and is suited for low‑voltage battery‑powered applications such as notebook power management.
Key electrical ratings include a drain‑source voltage of –30 V, continuous drain current of –1.3 A, on‑resistance as low as 180 mΩ at VGS = ‑10 V, and a total gate charge of 1.4‑1.9 nC. Thermal resistance values are 250 °C·W⁻¹ (junction‑to‑ambient) and 75 °C·W⁻¹ (junction‑to‑case). The datasheet also provides typical characteristic curves and packaging information.
| Drain‑Source Voltage (V_DSS) | -30 V |
|---|---|
| Continuous Drain Current (I_D) | -1.3 A |
| On‑Resistance (R_DS(on)) | 180 mΩ @ V_GS = -10 V |
| Total Gate Charge (Q_g) | 1.4‑1.9 nC |
The device can handle a continuous drain current of –1.3 A.
Typical on‑resistance is 180 mΩ when VGS is –10 V.
The drain‑source breakdown voltage is rated at –30 V.