The FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET is a logic-level MOSFET produced using Fairchild's advanced PowerTrench process that is specially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The FDN359BN is an N‑Channel Logic Level PowerTrench MOSFET designed for low‑voltage, battery‑powered applications where low in‑line loss and fast switching are required. It is produced using Fairchild’s advanced PowerTrench process and is offered in a SuperSOT™3 package compatible with the SOT‑23 pinout.
Key specifications include a 30 V drain‑source voltage, +20 V gate‑source rating, continuous drain current of 2.7 A (pulsed 15 A), typical on‑resistance of 0.046 Ω at VGS=10 V, and a low gate charge of about 5 nC. Thermal resistance values and detailed electrical characteristics are also provided.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | 2.7 A |
| Pulsed Drain Current (ID) | 15 A |
| Maximum Power Dissipation (PD) | 0.5 W |
| Typical On‑Resistance (RDS(on)) | 0.046 Ω at VGS=10 V |
| Gate Charge (Qg) | 5 nC (typical) |
| Input Capacitance (Ciss) | 485 pF |
| Package | SuperSOT™3 (SOT‑23 compatible) |
The datasheet lists a continuous drain current of 2.7 A.
The MOSFET can tolerate up to +20 V between gate and source.
Typical on‑resistance is 0.046 Ω at a gate‑source voltage of 10 V.
It is supplied in a SuperSOT™3 package that is pin‑compatible with SOT‑23.