FDN361AN is an N-channel logic level MOSFET produced by Fairchild Semiconductor. It uses PowerTrench technology and has the characteristics of low on-resistance and low gate charge. It is suitable for applications such as DC/DC converter, load switch and motor drive.
The FDN361AN is a logic‑level N‑Channel PowerTrench MOSFET designed for load‑switch and motor‑drive applications. It features a low on‑state resistance and a low gate charge of about 2.1 nC, providing fast switching performance.
Key electrical specifications include a 30 V drain‑source breakdown voltage, +20 V gate‑source rating, 18 A continuous drain current, and a typical on‑resistance of around 0.07 Ω. The device is supplied in the SuperSOT‑3 package, which has the same pinout as SOT‑23 but with 30 % higher power handling capability.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V (continuous) |
| Continuous Drain Current (ID) | 18 A |
| Power Dissipation (PD) | 0.5 W |
| Typical Gate Charge (Qg) | 2.1 nC |
The device is rated for a maximum drain‑source voltage of 30 V.
The typical gate charge is 2.1 nC.
It is supplied in the SuperSOT‑3 package, which has the same pinout as SOT‑23 but higher power handling.
The continuous drain current rating is 18 A.