FDN361BN is a low-voltage N-channel logic level power MOSFET from Fairchild Semiconductor. It has a maximum voltage of 30V and a rated current of 1.8A. The device features low RDS(ON), low gate charge, and a small package, making it suitable for low-voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits.
The FDN361BN is a 30 V N‑Channel Logic Level MOSFET built with Fairchild's PowerTrench process. It is optimized for low on‑state resistance and fast switching, making it suitable for low‑voltage, battery‑powered applications such as notebook computers and portable phones.
The document provides electrical characteristics, absolute maximum ratings, thermal specifications, and typical performance curves, along with trademark and disclaimer information.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | 1.4 A |
| Pulsed Drain Current (ID, pulse) | 10 A |
| Power Dissipation (PD) | 0.5 W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 250 °C/W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 75 °C/W |
| On‑Resistance (RDS(on)) @ VGS=10 V | 110 mΩ |
| On‑Resistance (RDS(on)) @ VGS=4.5 V | 160 mΩ |
The MOSFET can withstand up to 30 V between drain and source.
It is rated for a continuous drain current of 1.4 A.
Junction‑to‑ambient thermal resistance is 250 °C/W and junction‑to‑case is 75 °C/W.
The on‑resistance is 110 mΩ when VGS is 10 V.