This document is the datasheet for FDN352AP, introducing the characteristics and applications of FDN352AP
The FDN352AP is a logic‑level P‑Channel MOSFET built with Fairchild's PowerTrench technology, offering very low on‑state resistance and low gate charge for efficient switching. It is supplied in a high‑power SOT‑23 (SuperSOT‑3) package, providing 30 % higher power handling than standard SOT‑23 devices while maintaining a small footprint.
Key electrical characteristics include a drain‑source breakdown voltage of –30 V, a gate‑source rating of 425 V, continuous drain current of –1.3 A, and a typical on‑resistance of 180 mΩ at VGS = –10 V. Thermal resistance values are 250 °C·W⁻¹ (junction‑to‑ambient) and 75 °C·W⁻¹ (junction‑to‑case), supporting reliable operation in low‑voltage and battery‑powered applications such as notebook power management.
| Drain‑Source Voltage (V_DSS) | -30 V |
|---|---|
| Gate‑Source Voltage (V_GSS) | 425 V |
| Continuous Drain Current (I_D) | -1.3 A |
| Pulsed Drain Current (I_D, pulsed) | -10 A |
| Power Dissipation (P_D) | 0.5 W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 250 °C·W⁻¹ |
| Junction‑to‑Case Thermal Resistance (RθJC) | 75 °C·W⁻¹ |
| Output Capacitance (C_oss) | 40 pF |
| Total Gate Charge (Q_g) | 1.4–1.9 nC |
| On‑Resistance (R_DS(on)) at VGS = -10 V | 180 mΩ |
| On‑Resistance (R_DS(on)) at VGS = -4.5 V | 300 mΩ |
The maximum drain‑source voltage is –30 V.
The typical on‑resistance is 180 mΩ at VGS = –10 V.
The continuous drain current rating is –1.3 A.