FDN359AN N-Channel Logic Level PowerTrench TM MOSFET is a type of N-channel MOSFET produced by Fairchild Semiconductor. It features low on-state resistance and fast switching speed. Suitable for low voltage and battery powered applications where low line loss and fast switching are required.
The document describes the Fairchild FDN359AN N‑Channel Logic Level PowerTrench MOSFET, a low‑voltage, low‑loss device suited for battery‑powered applications that require fast switching and low gate charge. It highlights the device’s advanced PowerTrench process, low on‑state resistance, and high switching performance.
Key sections include absolute maximum ratings, detailed electrical characteristics (static and dynamic), thermal data, and package dimensions for the SuperSOT‑3 tape‑and‑reel format. Trademark and product‑status information are also provided.
| Drain‑Source Voltage (V_DSS) | 30 V |
|---|---|
| Gate‑Source Voltage (V_GS) | +20 V |
| Continuous Drain Current (I_D) | 2.7 A |
| Pulsed Drain Current | 15 A |
| Maximum Power Dissipation | 0.5 W |
| Junction‑to‑Ambient Thermal Resistance | 250 °C/W |
| Junction‑to‑Case Thermal Resistance | 7 °C/W |
| Operating Temperature Range | -55 to 150 °C |
| On‑Resistance (typical) | 0.037 Ω (at 10 V, 2.7 A) |
| Gate Charge (typical) | 5 nC |
The FDN359AN is rated for a maximum drain‑source voltage of 30 V.
The device has a typical gate charge of about 5 nC.
The device can operate from –55 °C up to 150 °C.