FDN359BN is an N-channel logic level MOSFET produced by Fairchild Semiconductor Corporation. Its maximum rated voltage is 30V and its maximum rated current is 2.7A.
The FDN359BN is a N‑Channel Logic Level MOSFET fabricated with Fairchild’s PowerTrench process, optimized for low on‑state resistance and fast switching. It is suited for low‑voltage, battery‑powered applications where low power loss and rapid response are required.
Key specifications include a 30 V drain‑source rating, 2.7 A continuous drain current, typical on‑resistance of 0.046 Ω at VGS = 10 V, and a low gate charge of about 5 nC. The device operates from –55 °C to +150 °C and features thermal resistances of 250 °C/W (junction‑to‑ambient) and 75 °C/W (junction‑to‑case).
| Drain‑Source Voltage (V_DSS) | 30 V |
|---|---|
| Gate‑Source Voltage (V_GSS) | +20 V |
| Continuous Drain Current (I_D) | 2.7 A |
| Maximum Power Dissipation | 0.5 W |
| On‑Resistance (R_DS(on)) typical | 0.046 Ω @ V_GS=10 V |
| Gate Charge (Q_g) typical | 5 nC |
| Operating Temperature Range | -55 °C to +150 °C |
| Junction‑to‑Ambient Thermal Resistance | 250 °C/W |
| Junction‑to‑Case Thermal Resistance | 75 °C/W |
The device is rated for a maximum drain‑source voltage of 30 V.
The typical gate charge is about 5 nC.
It can handle a continuous drain current of 2.7 A.
Typical on‑resistance is 0.046 Ω at a gate‑source voltage of 10 V.