FDN352AP is a low power P-channel logic level MOSFET manufactured by Fairchild Semiconductor. This device is produced using Fairchild Semiconductor's advanced Power Trench process, which provides extremely low on-state resistance and low gate charge for superior switching performance.
The FDN352AP is a single P‑Channel Logic Level MOSFET produced with Fairchild's PowerTrench technology. It is optimized for low‑voltage and battery‑powered designs, offering very low on‑state resistance and low gate charge in a compact SOT‑23 package. Typical applications include notebook computer power management and other low‑power circuits.
Key specifications include a –30 V drain‑source breakdown voltage, –1.3 A continuous drain current, on‑resistance as low as 180 mΩ at VGS = –10 V, and a maximum power dissipation of 0.5 W. Thermal performance is defined by a junction‑to‑ambient resistance of 250 °C/W (typical) and a junction‑to‑case resistance of 75 °C/W.
| Drain‑Source Voltage (V_DSS) | -30 V |
|---|---|
| On‑Resistance (R_DS(on)) @ V_GS = –10 V | 180 mΩ |
The device is rated for a maximum drain‑source voltage of –30 V.
The on‑resistance is 180 mΩ when V_GS = –10 V.