FDN357N is a N-channel logic level enhancement mode power field effect transistor produced by Fairchild. It uses the industry standard SOT-23 package with excellent thermal and electrical properties and high density cell design. It can provide extremely low RDS(ON).
The FDN357N is an N‑Channel logic‑level enhancement mode power MOSFET offered in a SuperSOT™‑3 surface‑mount package. It is designed for low‑voltage, battery‑powered applications such as notebook computers, portable phones, and PCMCIA cards, delivering fast switching and low on‑state resistance.
The document lists absolute maximum ratings, electrical and thermal characteristics, and typical performance curves, including drain‑source voltage, continuous and pulsed drain current, on‑resistance, capacitances, and thermal resistance values.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | 1.9 A |
| Pulsed Drain Current | 10 A |
| Maximum Power Dissipation | 0.5 W |
| On‑Resistance (RDS(on)) at VGS=4.5 V | 0.090 Ω |
| On‑Resistance (RDS(on)) at VGS=10 V | 0.060 Ω |
| Junction‑to‑Ambient Thermal Resistance | 250 °C/W |
| Junction‑to‑Case Thermal Resistance | 75 °C/W |
| Operating Temperature Range | -55 °C to 150 °C |
The device is rated for a maximum drain‑source voltage of 30 V.
It can conduct up to 1.9 A continuously.
The typical on‑resistance is about 0.090 Ω at VGS = 4.5 V.
It is specified to operate from –55 °C up to 150 °C.