The FDN361AN is a N-channel logic level MOSFET produced by Fairchild Semiconductor. It uses the PowerTrench process and has low on-state resistance and low gate charge. It is suitable for applications such as DC/DC converters, load switches, and motor drives.
The FDN361AN is an N‑Channel logic‑level MOSFET fabricated with Fairchild's PowerTrench process, offering low on‑state resistance and low gate charge for high‑speed switching. It is supplied in a SuperSOT‑3 package that matches the SOT‑23 pinout while providing 30 % higher power handling.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, and detailed package and tape‑and‑reel dimensions, along with trademark, disclaimer, and product status information.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) | 20 V |
| Continuous Drain Current (ID) | 18 A |
| Pulsed Drain Current (ID, pulse) | 8 A |
| Power Dissipation (PD) | 0.5 W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 250 °C/W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 75 °C/W |
| Typical Gate Charge (Qg) | 2.1 nC |
| Output Capacitance (Coss) | 50 pF |
| Reverse Transfer Capacitance (Crss) | 20 pF |
| On‑Resistance (RDS(on)) | 0.072 Ω (typical at VGS=10 V, ID=1.8 A) |
The device is rated for a maximum drain‑source voltage of 30 V.
It can conduct up to 18 A continuously.
The typical gate charge is 2.1 nC.