FDN359AN is a N-channel logic level MOSFET produced by Fairchild Semiconductor. It uses the company's advanced PowerTrench process, which provides low on-resistance and superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The document provides a detailed description of the Fairchild FDN359AN N‑Channel Logic Level PowerTrench MOSFET, highlighting its low on‑state resistance, fast switching and low gate charge, making it suitable for low‑voltage battery‑powered applications. It lists absolute maximum ratings, electrical characteristics, and typical performance curves.
Additional sections cover tape‑and‑reel packaging dimensions for the SuperSOT‑3 package, trademark information, and product status definitions. The datasheet is intended for designers and engineers who need precise specifications for circuit design and board layout.
| Drain‑Source Voltage (V_DSS) | 30 V |
|---|---|
| Gate‑Source Voltage (V_GSS) | +20 V |
| Typical Gate Charge (Q_g) | 5 nC |
| Package Type | SuperSOT‑3 (FS PKG Code 32) |
The maximum drain‑source voltage is 30 V.
The typical gate charge is about 5 nC.
It is offered in a SuperSOT‑3 tape‑and‑reel package (FS PKG Code 32).