FDN342P is a high-voltage, low-leakage N-channel MOSFET from Dinghao. The maximum drain-source voltage for this product is -20V, the maximum gate-source voltage is ±12V, and the maximum drain current is -2A. The power dissipation for this product is 0.5W, and the operating temperature range is -55 to +150 degrees Celsius.
The FDN342P is a P‑Channel 2.5 V specified PowerTrench™ MOSFET designed for power‑management applications such as load switches and battery protection. It features a rugged gate, low on‑resistance and is offered in the compact SuperSOT‑3 package.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, and packaging information including tape‑and‑reel dimensions. It also lists trademark and product‑status details from Fairchild Semiconductor.
| Drain‑Source Voltage (V_DSS) | -20 V |
|---|---|
| Gate‑Source Voltage (V_GSS) | +12 V |
| Continuous Drain Current (I_D) | -2 A |
| Power Dissipation (P_D) | 0.5 W |
| Junction‑to‑Ambient Thermal Resistance (R_θJA) | 250 °C/W |
| Junction‑to‑Case Thermal Resistance (R_θJC) | 75 °C/W |
| Input Capacitance (Ciss) | 635 pF |
| Output Capacitance (Coss) | 175 pF |
The FDN342P is rated for a maximum drain‑source voltage of –20 V.
It can conduct a continuous drain current of –2 A.
The junction‑to‑ambient thermal resistance is 250 °C/W.