FDN340P is a P-Channel Logic Level MOSFET produced by Fairchild Semiconductor using the company's advanced Power Trench process. This process has been specially tailored to minimize the on-state resistance while maintaining low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
The FDN340P is a single P‑Channel logic‑level PowerTrench® MOSFET designed for portable electronics, load switching, power management, battery charging, and DC/DC conversion. It features a low on‑state resistance and low gate charge for efficient switching.
Key specifications include a drain‑source breakdown voltage of -20 V, a continuous drain current of -2 A, an on‑resistance of 70 mΩ at Vgs = ‑4.5 V, and a typical gate charge of 7.2 nC. Thermal resistance values and package information are also provided for design integration.
| Drain-Source Voltage (V_DSS) | -20 V |
|---|---|
| Gate-Source Voltage (V_GS) | +8 V |
| Continuous Drain Current (I_D) | -2 A |
| Gate Charge (Q_g) | 7.2 nC (typical) |
The maximum continuous drain current is -2 A.
The typical gate charge is 7.2 nC.
The drain‑source breakdown voltage rating is -20 V.