The document provides information about the inventory, technical data, encyclopedia information, and hot news of QFET products. QFET is a product with special characteristics, which can achieve high efficiency and reliability under specific conditions. It has excellent performance and stable working characteristics, and is widely used in various fields.
The FQPF19N20L is a 200 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for DC‑DC converters, SMPS, and motor‑control applications.
Key specifications include a continuous drain current of 12.8 A at 25 °C, a pulsed rating of 51.2 A, a typical on‑resistance of 0.142 Ω at VGS = 10 V, and a low gate charge of about 27 nC. The device is supplied in a TO‑220F package and operates over a temperature range of –55 °C to +150 °C.
| Drain-Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | 12.8 A |
| Pulsed Drain Current (ID) (Note 1) | 51.2 A |
| Gate-Source Voltage (VGS) | +20 V |
| On‑Resistance (RDS(on)) typical | 0.142 Ω @ VGS=10 V |
| Typical Gate Charge (Qg) | 27 nC |
| Power Dissipation (PD) at 25 °C | 50 W |
| Operating Temperature Range | -55 °C to +150 °C |
The device is rated for a maximum drain‑source voltage of 200 V.
It can conduct up to 12.8 A continuously at 25 °C.
The typical gate charge is about 27 nC.
It is supplied in a TO‑220F package.