This document describes the FQPF1N60 product from Fairchild Semiconductor International. It is a 600V N-Channel MOSFET power field effect transistor. The product is produced using advanced DMOS technology, featuring low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for high efficiency switch mode power supplies.
The FQPF1N60 is a 600 V N‑Channel enhancement‑mode power MOSFET designed for high‑efficiency switch‑mode power supplies. It features low gate charge, low output capacitance, and fast switching performance, making it suitable for high‑energy pulse and avalanche applications.
Key specifications include a continuous drain current of 0.9 A at 25 °C, a pulsed drain current of 3.6 A, a typical gate charge of about 5 nC, and a TO‑220F package with a thermal resistance of 5.95 °C/W (junction‑to‑case). The datasheet also details breakdown voltage variation, on‑resistance trends, and transient thermal response curves.
| Drain-Source Voltage (V_DSS) | 600 V |
|---|---|
| Continuous Drain Current @ 25°C (I_D) | 0.9 A |
| Continuous Drain Current @ 100°C (I_D) | 0.57 A |
| Pulsed Drain Current (I_D,pulse) | 3.6 A |
| Gate-Source Voltage (V_GS) | ±30 V |
| Power Dissipation @ 25°C (P_D) | 21 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 5.95 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62.5 °C/W |
| Typical Gate Charge (Q_g) | 5.0 nC |
The device is rated for a maximum drain‑source voltage of 600 V.
It can conduct up to 0.9 A continuously at a case temperature of 25 °C.
The typical gate charge is about 5 nC.
It is supplied in a TO‑220F package.