This document describes a single-channel P-channel logic level PowerTrench MOSFET product, produced using Fairchild Semiconductor's advanced process, which features low on-state resistance, low gate charge, and superior switching performance. It is suitable for portable electronic devices applications, such as load switching and power management, battery charging circuits, and DC/DC conversion.
The FDN340P is a P‑Channel logic‑level MOSFET built with Fairchild's PowerTrench® process, offering low on‑state resistance and low gate charge for portable electronics, load switching, battery charging, and DC/DC conversion.
The document lists absolute maximum ratings, detailed electrical characteristics, typical performance curves, and packaging information for the SuperSOT‑3 tape‑and‑reel format, along with trademark and disclaimer notices.
| Drain‑Source Voltage (V_DSS) | 20 V |
|---|---|
| Gate‑Source Voltage (V_GS) | +8 V |
| Continuous Drain Current (I_D) | 2 A |
| On‑Resistance (R_DS(on)) at V_GS = -4.5 V | 0.07 Ω |
| Typical Gate Charge (Q_g) | 8 nC |
| Package | SuperSOT‑3 (tape & reel) |
| Reel Quantity | 3,000 units per reel |
The device can handle a continuous drain current of 2 A.
The drain‑source breakdown voltage is rated at 20 V.
The typical gate charge is about 8 nC.
It is supplied in the SuperSOT‑3 tape‑and‑reel package.