This document describes a N-Channel MOSFET power field effect transistor called FQPF19N10. The device is produced using advanced DMOS technology and features low on-state resistance, superior switching performance, and high energy pulse tolerance. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
The FQPF19N10 is a 100 V N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, high‑efficiency DC‑DC converters and motor control, providing low on‑state resistance, fast switching and robust avalanche capability.
Key electrical specifications include a continuous drain current of 13.6 A at 25 °C, pulsed current up to 54.4 A, typical on‑resistance of 0.078 Ω, gate threshold voltage of 2.0‑4.0 V, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑220F package with thermal resistance junction‑to‑case of 3.95 °C·W⁻¹.
| Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 13.6 A |
| Continuous Drain Current (Id) @ 100 °C | 9.6 A |
| Pulsed Drain Current | 54.4 A |
| Gate‑Source Voltage (VGS) Max | ±25 V |
| Total Gate Charge (Qg) Typical | 19 nC |
| Maximum Junction Temperature | 175 °C |
| Thermal Resistance Junction‑to‑Case | 3.95 °C·W⁻¹ |
| Reverse Transfer Capacitance (Crss) Typical | 32 pF |
The device can conduct 13.6 A continuously at 25 °C and 9.6 A at 100 °C.
It can handle a pulsed drain current of up to 54.4 A.
The MOSFET is supplied in a TO‑220F package.