The FQT4N20L QFET is a 200V LOGIC N-Channel MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. It features low RDson, high switching speed, 100% avalanche testing, improved dv/dt capability, and low level gate drive requirements.
The FQT4N20L is a N‑Channel enhancement mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is designed for high‑efficiency switching in DC/DC converters, switch‑mode power supplies, UPS inverters, and motor‑control applications.
Key features include a 0.85 A continuous drain current at 25 °C, low typical gate charge of 4 nC, low output capacitance, fast switching times, and 100 % avalanche testing. The device is supplied in a SOT‑223 package and is rated for a maximum drain‑source voltage of 200 V.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 0.85 A |
| Typical Gate Charge (Qg) | 4.0 nC |
| Output Capacitance (Coss) | 36 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 6 pF (typical) |
| Power Dissipation (PD) @ 25 °C | 2.2 W |
| Thermal Resistance (RθJA) | 57 °C/W |
The device is rated for a maximum drain‑source voltage of 200 V.
Its typical gate charge is 4.0 nC.
It is supplied in a SOT‑223 surface‑mount package.
The maximum continuous drain current at 25 °C is 0.85 A.