This datasheet introduces the characteristics of the IXFH/IXFT model N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt MOSFET products, including rated voltage, maximum current, and on-resistance.
The IXYS IXFH/IXFT series includes the 24N50Q and 26N50Q N‑channel enhancement mode MOSFETs. They are rated for 500 V drain‑source voltage and offer low on‑resistance for high‑power applications.
The datasheet provides maximum ratings, typical electrical characteristics, package dimensions, thermal performance, and gate charge curves for both device variants.
| Continuous Drain Current (Id) – 24N50Q | 24 A |
|---|---|
| Continuous Drain Current (Id) – 26N50Q | 26 A |
| Pulsed Drain Current (Id) – 24N50Q | 96 A |
| Typical On‑Resistance (Rds(on)) – 24N50Q | 0.23 Ω |
| Typical On‑Resistance (Rds(on)) – 26N50Q | 0.20 Ω |
| Package Weight (TO‑247) | 6.9 g |
| Mounting Torque | 1.13 N·m |
The 24N50Q version is rated for 24 A continuous drain current, while the 26N50Q version is rated for 26 A.