IXTH 50N20 is a N-channel enhancement mode MOSFET produced by IXYS. Its maximum voltage is 200V and its maximum current is 50A. Its typical on-resistance is 45mΩ. It is packaged in TO-247 and TO-204.
This datasheet describes the IXTH 50N20 (TO‑247) and IXTM 50N20 (TO‑204) MegaMOS FETs, including maximum ratings, test conditions, and characteristic values such as drain‑source voltage, continuous drain current, and on‑resistance. It also lists key features, typical applications, and advantages of the devices.
Package information, thermal impedance curves, and detailed electrical graphs are provided to aid designers in selecting and integrating these MOSFETs into switch‑mode power supplies, motor controls, UPS systems, and DC‑chopper circuits.
| Maximum Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Continuous Drain Current (ID) | 50 A |
| On‑Resistance (RDS(on)) | 45 mΩ |
| Gate Charge (Qg(on)) | 190 nC (typical) |
| Package Weight (TO‑247) | 6 g |
The devices are rated for a maximum drain‑source voltage of 200 V.
Both MOSFETs can handle a continuous drain current of 50 A.
The typical on‑resistance is 45 mΩ.